Add Scott's various test files.

This commit is contained in:
Danila Fedorin 2021-03-09 19:15:28 -08:00
parent b58f4df33e
commit 8285087e3f
6 changed files with 329 additions and 0 deletions

51
final/testBuffer.cir Normal file
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* File includes subcircuits and technology definitions
.include ./SRAM_bits.cir
*this cell emulates load from SRAM cells,
* Number refers to the load from than number of cells
.subckt memLoad ttt fff number=254
Xnt ttt gnd dead nn ww='number*5'
Xnf fff gnd dead nn ww='number*5'
.ends memLoad
*********begin: topLevel*****
* Parameters
.global gnd vdd
.param gnd=0
*********begin: topLevel*****
.param per = 20ns
.param dataLead=500ps
.param lw=1000
.param wirew=12
vdd vdd 0 'supply'
Xclok clk dat1 period='per' start='per+dataLead' total=1 duty=0.5 sz=50
Xrdwr rdw dat1 period='per' start='2*per' total=2 duty=1
Xdii din dat1 period='per' start='per' total=4 duty=2 sz=30
Xwr bt1 bf1 din rdw clk write1
Xw1 bt1 btt bf1 bff wire_dual len='lw' wid='wirew'
Xmd btt bff memLoad number =254
Xla btt bff clk mem1
Xrd btt bff set rst rdw clk readSub
Xrc dot set rst vdd vdd vdd vdd vdd vdd readCollect
.ic V(la:tt)=0 V(la:ff)=1
.ic V(bt2)=1
.tran 1p 'per*10'

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final/testDecoder.cir Normal file
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* File includes subcircuits and technology definitions
.include ./SRAM_bits.cir
*this cell emulates load from SRAM cells,
* Number refers to the load from than number of cells
.subckt memLoad ttt fff number=254
Xnt ttt gnd dead nn ww='number*5'
Xnf fff gnd dead nn ww='number*5'
.ends memLoad
*********begin: topLevel*****
* Parameters
.global gnd vdd
.param gnd=0
*********begin: topLevel*****
.param per = 5ns
.param lw=500
.param wirew=3
*DC supplies
vdd vdd 0 'supply'
Xclok clk dat1 period='per' start='per' total=1 duty=0.5 sz=120
Xbit ad0 dat1 period='per' start='0.5*per' total=3 duty=1
Xde ope ad0 clk decModel size=20
.tran 1p 25n

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final/testMem.cir Normal file
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* File includes subcircuits and technology definitions
.include ./SRAM_bits.cir
*this cell emulates load from SRAM cells,
* Number refers to the load from than number of cells
.subckt memLoad ttt fff number=254
Xnt ttt gnd dead nn ww='number*5'
Xnf fff gnd dead nn ww='number*5'
.ends memLoad
*********begin: topLevel*****
* Parameters
.global gnd vdd
.param gnd=0
*********begin: topLevel*****
.param per = 5ns
.param lw=100
.param wirew=3
*DC supplies
vdd vdd 0 'supply'
Xclok clk dat1 period='0.5*per' total=1 duty=0.5 sz=120
Xdii dii dat1 period='per' start='per' total=3 duty=1
Xbit ad0 dat1 period='per' start='0.5*per' total=3 duty=1
Xde ope ad0 clk decModel size=20
* hardwire rdw signal to gnd
Xwr bt0 bf0 dii gnd clk write1
Xw0 bt0 bt1 bf0 bf1 wire_dual len='lw' wid='wirew'
* Place memory cell at end of wire
* First make sure it works with short wire and few memory cells
* View on plotter
*v(ope), v(dii)
*v(la:ff) v(la:tt)
*v(bf1) and v(bt1)
Xla bt1 bf1 ope mem1 m=1
Xmd bt1 bf1 memLoad number =254
*14.462274109131130
.tran 1p 50n

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final/testRead.cir Normal file
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* File includes subcircuits and technology definitions
.include ./SRAM_bits.cir
*this cell emulates load from SRAM cells,
* Number refers to the load from than number of cells
.subckt memLoad ttt fff number=254
Xnt ttt gnd dead nn ww='number*5'
Xnf fff gnd dead nn ww='number*5'
.ends memLoad
*********begin: topLevel*****
* Parameters
.global gnd vdd
.param gnd=0
*********begin: topLevel*****
.param per = 3n
.param lw=5000
.param wirew=3
*DC supplies
vdd vdd 0 'supply'
Xclok clk dat1 period='per' start='per' total=1 duty=0.5 sz=120
Xrdwr rdw dat1 period='per' start='per' total=2 duty=1
Xdii dii dat1 period='per' start='per' total=3 duty=1
* vary
.param dip=0.05
Vt bt2 0 PULSE('supply''supply-dip' 'per' 10p 10p '2*per' '4*per')
Vf bf2 0 PULSE('supply-dip''supply' 'per' 10p 10p '2*per' '4*per')
Xbit ad0 dat1 period='per' start='0.5*per' total=3 duty=1
Xde ope ad0 clk decModel size=20
* Xrd bt2 bf2 dot vdd clk read1
Xrd bt2 bf2 set rst vdd clk readSub
.ic v(dot)=0
.tran 1p 50n

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final/testSRAM.cir Normal file
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* File includes subcircuits and technology definitions
.include ./SRAM_bits.cir
*this cell emulates load from SRAM cells,
* Number refers to the load from than number of cells
.subckt memLoad ttt fff number=254
Xnt ttt gnd dead nn ww='number*5'
Xnf fff gnd dead nn ww='number*5'
.ends memLoad
*********begin: topLevel*****
* Parameters
.global gnd vdd
.param gnd=0
*********begin: topLevel*****
.param per = 100ns
.param lw=500
.param wirew=3
*DC supplies
vdd vdd 0 'supply'
Xclok clk dat1 period='0.5*per' total=1 duty=0.5 sz=120
Xrdwr rdw dat1 period='per' start='per' total=2 duty=1
*Vrdw rdw 0 'supply'
Xbit ad0 dat1 period='per' start='per' total=3 duty=1
Xdii dii dat1 period='4*per' total=1 duty=0.5 sz=120
Xacc acc dat1 period='per' start='per+10ps' total=2 duty=1
*
Xwr bt0 bf0 dii rdw clk write1
Xw0 bt0 bt1 bf0 bf1 wire_dual len='lw' wid='wirew'
Xla bt1 bf1 ope mem1
Xmd bt1 bf1 memLoad number =1
Xw1 bt1 bt2 bf1 bf2 wire_dual len='lw' wid='wirew'
Xrd bt2 bf2 dot rdw clk read1
Xde ope ad0 clk decModel size=10
.tran 1ps 1600ns

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final/testWrite.cir Normal file
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* File includes subcircuits and technology definitions
.include ./SRAM_bits.cir
*this cell emulates load from SRAM cells,
* Number refers to the load from than number of cells
.subckt memLoad ttt fff number=254
Xnt ttt gnd dead nn ww='number*5'
Xnf fff gnd dead nn ww='number*5'
.ends memLoad
*********begin: topLevel*****
* Parameters
.global gnd vdd
.param gnd=0
*********begin: topLevel*****
.param per = 1ns
.param lw=500
.param wirew=3
*DC supplies
* make sure data signal is set up before clock signal triggers write
* possible NOR rdw and Clk, and then maybe delay clk?
* connect PMOS transistors to output of NOR gate, not directly to clk
vdd vdd 0 'supply'
Xclok clk dat1 period='per' start='per' total=1 duty=0.5 sz=120
Xrdwr rdw dat1 period='per' start='per' total=2 duty=1
Xdii dii dat1 period='per' start='per+0' total=3 duty=1
Xwr bt0 bf0 dii gnd clk write1
.tran 1p 15n