Add initial homework solution.
This commit is contained in:
commit
0619ffc732
77
HW1.tex
Normal file
77
HW1.tex
Normal file
|
@ -0,0 +1,77 @@
|
|||
\documentclass{article}
|
||||
\usepackage[margin=1in]{geometry}
|
||||
\title{Homework 1}
|
||||
\begin{document}
|
||||
\maketitle
|
||||
\section*{Q1}
|
||||
The three version of Moore's Law are as follows:
|
||||
\begin{itemize}
|
||||
\item \textbf{Scaling Up}. We were able to shrink the size
|
||||
of a transistor, thereby roughly doubling the number of transistors
|
||||
on a single chip every 1-2 years.
|
||||
\item \textbf{Scaling Down}. The costs of a single
|
||||
transistor decreased by about 30\% every year.
|
||||
This made it cost-effective to use microprocessors
|
||||
for various applications.
|
||||
\item \textbf{Scaling Out}. We are able to combine
|
||||
microprocessors with other technologies, even
|
||||
entirely in our silicon processing. For instance,
|
||||
we can make tiny accelerometers, or use a saphire
|
||||
substrate instead of silicon to work with
|
||||
light.
|
||||
\end{itemize}
|
||||
|
||||
\section*{Q2}
|
||||
According to Denard scaling, power density remains constant.
|
||||
If this holds, we can scale down our designs and things
|
||||
will continue to just work.
|
||||
|
||||
\section*{Q3}
|
||||
We were not able to scale voltage at the desired factor. Eventually,
|
||||
thermally-induced voltages are comparable in magnitude with the voltages
|
||||
we use to drive our transistors, which makes them work unreliably or leak
|
||||
charge. Because we can no longer scale voltage down, our power density
|
||||
keeps growing. This means that our processors get increasingly hot,
|
||||
which, in turn, limits the clock speeds of our designs.
|
||||
|
||||
\section*{Q4}
|
||||
A wafer is first covered in Photoresist, a chemical that is
|
||||
either soluble until or before it comes into contact with UV light.
|
||||
UV light is shined onto the photoresist past a mask, which creates
|
||||
regions that are exposed to UV (where not blocked by the mask) and regions
|
||||
that are in ``shadow'' (blocked by the mask). Depending on the type of
|
||||
photoresist, one of the regions (but not the other) becomes soluble,
|
||||
and can be removed using a solvent (developer). This leaves a pattern
|
||||
of photoresist on top of the wafer. Different approaches can then
|
||||
be used that affect only the areas not covered by photoresist (for instance,
|
||||
if gold is below the photoresist layer, a chemical can be used to
|
||||
dissolve the gold; the chemical will not touch the gold covered by
|
||||
photoresist, thus leaving it in place).
|
||||
|
||||
\pagebreak
|
||||
\section*{Q5}
|
||||
Not quite sure what this question means, but I have a few thoughts:
|
||||
|
||||
\begin{itemize}
|
||||
\item Instead of trying to reduce the wavelength of light further
|
||||
down (which didn't actually work out), we use the same old
|
||||
193nm light, and focused on refining the technique.
|
||||
\item We started to perform multiple lithography (and maybe etch)
|
||||
steps for a single layer, which made it possible to
|
||||
halve (or further reduce) the minimum pitch.
|
||||
\item Self-aligned mutli-patterning techniques cannot really lay down
|
||||
``holes'' in lines; these holes have to be added later.
|
||||
As a result, layouts of modern CPUs are very regular,
|
||||
since many components ``share'' a single line. This
|
||||
allows for far less freedom in where to place the
|
||||
various components of a chip.
|
||||
\end{itemize}
|
||||
|
||||
\section*{Q6}
|
||||
From the ``Rosetta Stone of Lithography'' it looks like with true double patterning,
|
||||
the smallest we can get is the 10nm node (50nm pitch).
|
||||
|
||||
\section*{Q7}
|
||||
We use tin plasma! Apparently, tin is ``fairly efficient'' at converting laser
|
||||
light into EUV.
|
||||
\end{document}
|
Loading…
Reference in New Issue
Block a user